Alfa Aesar Tantalum nitride, 99.5% (metals basis)
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Alfa Aesar Tantalum nitride, 99.5% (metals basis)
MDL
MFCD00049568
EINECS
234-788-4
Chemical Properties
Formula
TaN
Formula Weight
194.95
Form
-325 Mesh Powder
Melting point
3360°
Storage & Sensitivity
Ambient temperatures.
Solubility
Insoluble in water.
Applications
Tantalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
Notes
Stable under recommended storage conditions. Incompatible with oxidizing agents.